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| SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) 0.007 @ VGS = 10 V 0.009 @ VGS = 4.5 V ID (A) "75 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N05-07 DS S N-Channel MOSFET Top View SUB75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 55 "20 "75a "60 "240 "60 180 158c 3.7 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 0.95 Unit _C/W 2-1 SUP/SUB75N05-07 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 44 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 40 120 0.0056 0.0072 0.007 0.009 0.011 0.015 S W 55 V 1 3 "100 1 50 250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0 47 W V, 0.47 ID ^ 75 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 30 V, VGS = 10 V ID = 75 A V V, VGS = 0 V, VDS = 25 V, f = 1 MHz 6830 720 350 135 25 34 13 11 90 25 20 20 ns 160 40 170 nC C pF F Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A di/dt = 100 A/ms A, IF = 75 A, VGS = 0 V 1.0 45 2 0.09 75 A 240 1.3 80 5 0.4 V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70871 S-60952--Rev. A, 19-Apr-99 SUP/SUB75N05-07 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 5 thru 10 V 200 I D - Drain Current (A) I D - Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 150 120 100 4V 80 TC = 125_C 40 25_C -55_C 0 50 2, 3 V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 210 180 g fs - Transconductance (S) 150 125_C 120 90 60 30 0 0 20 40 60 80 100 0 0 TC = -55_C r DS(on) - On-Resistance ( W ) 25_C 0.008 0.010 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 0.006 0.004 0.002 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 10000 10 Gate Charge 8000 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 8 VGS = 30 V ID = 75 A 6000 6 4000 4 2000 Crss Coss 2 0 0 10 20 30 40 50 0 0 20 40 60 80 100 120 140 VDS - Drain-to-Source Voltage (V) Document Number: 70871 S-60952--Rev. A, 19-Apr-99 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75N05-07 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 75 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 1.5 TJ = 25_C 10 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 300 80 Drain-Source Breakdown vs. Junction Temperature 100 70 IAV (A) @ TJ = 25_C I Dav (a) V (BR)DSS (V) 60 10 IAV (A) @ TJ = 150_C 50 1 0.0001 0.001 0.01 tin (Sec) 0.1 1 40 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70871 S-60952--Rev. A, 19-Apr-99 SUP/SUB75N05-07 New Product THERMAL RATINGS Vishay Siliconix Maximum Drain Current vs. Case Temperature 80 300 Safe Operating Area 10 ms Limited by rDS(on) I D - Drain Current (A) 60 I D - Drain Current (A) 100 100 ms 40 1 ms 10 TC = 25_C Single Pulse 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-5 |
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